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Advance Technical Information
Standard
Power MOSFET
N-Channel Enhancement Mode
IXTH 60N15
V DSS = 150 V
I D (cont) = 60 A
R DS(on) = 33 m ?
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
T J
T J
= 25 ° C to 150 ° C
= 25 ° C to 150 ° C; R GS = 1 M ?
150
150
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
D (TAB)
I D25
I DM
T C
T C
= 25 ° C
= 25 ° C, pulse width limited by T JM
60
240
A
A
I AR
E AR
E AS
dv/dt
P D
T C
T C
I S
T J
T C
= 25 ° C
= 25 ° C
≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
≤ 150 ° C, R G = 2 ?
= 25 ° C
60
30
1.0
5
275
A
mJ
J
V/ns
W
G = Gate,
S = Source,
D = Drain,
TAB = Drain
T J
-55 ... +150
° C
T JM
T stg
150
-55 ... +150
° C
° C
Features
M d Mounting torque
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
1.13/10 Nm/lb.in.
6 g
300 ° C
International standard package
JEDEC TO-247 AD
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
Switch-mode and resonant-mode
power supplies
V DSS
V GS(th)
I GSS
V GS
V DS
V GS
= 0 V, I D = 250 μ A
= V GS , I D = 250 μ A
= ± 20 V DC, V DS = 0
150
2.0
4.0
± 100
V
V
nA
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
Advantages
Easy to mount with 1 screw
R DS(on)
V GS = 10 V, I D = 15 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
33 m ?
(isolated mounting screw hole)
Space savings
High power density
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DS99035(04/03)
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相关代理商/技术参数
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IXTH60N25 功能描述:MOSFET 60 Amps 250V 0.046 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTH67N08MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-247(5)
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